TD62551,553~555S
2001-07-04
1
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62551S,TD62553S,TD62554S,TD62555S
4CH SINGLE DRIVER : COMMON EMITTER
The TD62551S are comprised of four NPN transistor arrays.
Applications include relay, hammer, lamp and display (LED)
drivers.
FEATURES
l Output current (single output) 150 mA (Max)
l High sustaining voltage output 25 V (Min)
l Low saturation voltage V
CE (sat)
= 0.5 V @I
OUT
= 50 mA
l Inputs compatible with various types of logic.
l TD62551S
: External
l TD62553S
: R
IN
= 2.7 k ...... TTL, 5 V CMOS
l TD62554S
: R
IN
= 10.5 k .... 6~15 V PMOS, CMOS
l TD62555S
: R
IN
= 20 k ....... 12~24 V PMOS
l Package type : SIP-9 pin
PIN CONNECTION
SCHEMATICS
(EACH DRIVER)
TD62551S
Note: The input and output parasitic diodes cannot be used as clamp diodes.
Weight: 0.92 g (Typ.)
TD62551,553~555S
2001-07-04
2
MAXIMUM RATINGS
(Ta = 25C)
CHARACTERISTIC SYMBOL
RATING
UNIT
Collector-Emitter Voltage
V
CEO
25 V
Collector-Base Voltage
V
CBO
35 V
Collector Current
I
C
150
mA / ch
Input Voltage
V
IN
(Note 1)
20
V
Input Current
I
IN
(Note 2)
10
mA
Power Dissipation
P
D
(Note 3)
0.75
W
Operating Temperature
T
opr
-40~85 C
Storage Temperature
T
stg
-55~150 C
Note 1: Except TD62551S
Note 2: Only TD62551S
Note 3: Delated above 25C
in the proportion of 6.0mW / C.
RECOMMENDED OPERATING CONDITIONS
(Ta = -40~85C)
CHARACTERISTIC SYMBOL
CONDITION
MIN
TYP.
MAX
UNIT
Collecter-Emitter Voltage
V
CEO
0
25 V
Collecter-Base Voltage
V
CBO
0
35 V
TD62551S
TD62553S
0
100
TD62554S 0
80
Collector Current
TD62555S
I
C
0
60
mA /
ch
Input Voltage
TD62553S
TD62554S
TD62555S
V
IN
0
20 V
Input Current
TD62551S
I
IN
0
5 mA
Power Dissipation
P
D
0.27
W
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL
TEST
CIR-
CUIT
TEST CONDITION
MIN
TYP.
MAX
UNIT
Output Leakage Current
I
CEX
1 V
CE
= 25 V, V
IN
= 0 V
10 A
I
IN
= 0.5 mA, I
C
= 10 mA
0.15 0.2
Collector-Emitter Saturation Voltage
V
CE (sat)
2
I
IN
= 2.5 mA, I
C
= 50 mA
0.35 0.5
V
(Note 1)
60
400
DC Current
Transfer Ratio
(Note 2)
h
FE
2 V
CE
= 5 V, I
C
= 10 mA
50
400
TD62553S
1.7 2.1 2.5
TD62554S
4.4 6.0 7.6
Input Voltage
Td62555S
V
IN (ON)
3 I
IN
= 0.5 mA, I
C
= 10 mA
7.7 10.7 13.8
V
Turn-On Delay
t
ON
100
Turn-Off Delay
t
OFF
4
V
OUT
= 25 V, R
L
= 210
C
L
= 15 pF
500
ns
Note 1: Except TD62551S.
Note 2: Only TD62551S.
TD62551,553~555S
2001-07-04
3
TEST CIRCUIT
1. I
CEX
2.
h
FE
, V
CE
(sat)
3. V
IN (ON)
4. t
ON
, t
OFF
Note 1: Pulse Width 50 s, Duty Cycle 10%
Output Impedance 50 , t
r
5 ns, t
f
10 ns
Note 2: See right.
Note 3: C
L
includes probe and jig capacitance.
PRECAUTIONS for USING
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors.
Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that
excess current or voltage will not be applied to the IC.
Utmost care is necessary in the design of the output line, V
CC
and GND line since IC may be destroyed due to
short-circuit between outputs, air contamination fault, or fault by improper grounding.
INPUT CONDITION
TYPE NUMBER
R
I
V
IH
TD62551S 2.7
k 3
V
TD62553S 0
3
V
TD62554S 0
10
V
TD62555S 0
14
V
TD62551,553~555S
2001-07-04
4
PACKAGE DIMENSIONS
SIP9-P-300-2.54A
Unit: mm
Weight: 0.92 g (Typ.)
TD62551,553~555S
2001-07-04
5
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conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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The information contained herein is subject to change without notice.
000707EBA
RESTRICTIONS ON PRODUCT USE
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